Samsung has presented a new addition to its family of solid state drives, and with 512GB capacity it’s one spacious newcomer. Even more interesting are the memory circuits it uses, toggle-mode DDR NAND, together with a Samsung made memory controller.
Samsung makes its own toggle-mode DDR NAND circuits with 30nm technology and the 512 GB SSD have a bunch of 32 gigabit memory chips inside. Together with an energy efficient SSD controller developed specifically for toggle-mode DDR NAND Samsung specifies the read and write speeds to 250 MB/s and 220 MB/s respectively.
Beside 256-bitars AES (Advanced Encryption Standard) encryption the drive also supports TRIM. Samsung will sell the new series of SSDs in capacities from 64 GB up to 512 GB, and mass production starts next week.
With the SATA 3.0 Gbps interface and low power consumption Samsung primarily targets the mobile segment.
Early introduction of this state-of-the-art toggle DDR solution will enable Samsung to play a major role in securing faster market acceptance of the new wave of high-end SSD technology.