Toshiba has launched the first Toggle Mode DDR 1.0 NAND memory circuits with a new interface for theoretic transfer speeds many times higher than regular NAND memory circuits. The new memory circuits are med with 32nm technology and can be used in SSDs.
Toshiba presented, together with Samsung, the Toggle Mode DDR earlier this summer and then talked about the second generation technology with 400 Mbps data interface. While the development of Toggle Mode DDR 2.0 NAND continues Toggle Mode DDR 1.0 is getting close to market and brings significant performance boosts.
Current SLC NAND memory circuits have a data interface with 40 MT/s (megatransfers per second) capacity, Toshiba’s Toggle Mode DDR 1.0 NAND memory circuits boosts this to 133 MT/s. At the same time Toshiba’s new memory circuits consumes less power, which should result in both faster and more energy efficient SSDs.
Toshiba will ship Toggle Mode DDR 1.0 NAND memory circuits as both SLC and MLC, but when these will appear in retail products is uncertain.