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Micron has now announced that it is the first company to present DDR3-SDRAM circuit at 1 gigabit which makes it possible to supply systems with faster and more power efficient memory. Micron’s new DDR3 circuits are made with 78nm technology and will appear as test chips at frequencies between 400MHz and 800MHz. The power consumption is suppose to be really low with a voltage at only 1.5v and the new 1Gb circuits can be used in x4, x8 and x16 configurations. This means that it would be able to launch memory modules at 512MB and up to 4GB capacity. We’re still waiting for the first DDR3-SDRAM-based systems but the memory manufacturers seems to be going ahead anyway.



”Micron’s DDR3 products will support data rates of 800 megatransfers per second (MT/s) to 1,600 MT/s with clock frequencies of 400 megahertz (MHz) to 800 MHz respectively, doubling the speed from DDR2. At DDR3’s top speed, a 100,000-page document can be transferred in approximately one second.”

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