Samsung unveils ultra green 40nm 4Gb DDR3 chips

Samsung has announced a new line of green memory modules, both literally and figuratively. The company has presented the first production samples of its 4Gb DDR3 DRAM chips. They are made with a new 40 nanometer process that the company claims to be ”ultra green” where a single 16GB DDR3 memory module can save up to 35% power compared to yesterday’s technology.

The new memory chips enables Samsung to build memory modules with up to 32GB capacity, which is quite an achievement when you see how well packed its 8GB modules really are.

The new 4Gb DDR3 supports both 1.5V and 1.35V specifications. Available memory modules include 16 and 32GB RDIMMs and 8GB SoDIMMs with a 1.6-Gigabit per second (Gbps) performance rate.

The memory modules are geared toward the server segment where power consumption is crucial, but also the retail sector where the new technology will introduce new advantages to home users.